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參數資料
| 型號： | IRLR2905PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 321K |
| 代理商： | IRLR2905PBF |
S
D
G
Parameter
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 55V
R
DS(on)
= 0.027
I
D
= 42A
12/7/04
www.irf.com
1
D-Pak
TO-252AA
I-Pak
TO-251AA
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2905)
Straight Lead (IRLU2905)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Parameter
Max.
42
30
160
110
0.71
± 16
210
25
11
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
PD- 95084A
相關PDF資料 |
PDF描述 |
|---|---|
| IRLU2905PBF | HEXFET Power MOSFET |
| IRLR2905ZPBF | HEXFET Power MOSFET |
| IRLU2905ZPbF | HEXFET Power MOSFET |
| IRLR2905Z | AUTOMOTIVE MOSFET |
| IRLU2905Z | AUTOMOTIVE MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLR2905TR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 42A 3-Pin(2+Tab) DPAK T/R |
| IRLR2905TRL | 功能描述:MOSFET N-CH 55V 42A DPAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRLR2905TRLPBF | 功能描述:MOSFET MOSFT 55V 36A 27mOhm 32nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR2905TRPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR2905TRR | 功能描述:MOSFET N-CH 55V 42A DPAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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