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參數資料
| 型號： | IRLR3105PBF |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車MOSFET的 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 319K |
| 代理商： | IRLR3105PBF |
IRLR3105PbF
IRLU3105PbF
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.037
I
D
= 25A
www.irf.com
1
D-Pak
IRLR3105 IRLU3105
I-Pak
Parameter
Typ.
–––
–––
–––
Max.
2.65
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
°C/W
Thermal Resistance
AUTOMOTIVE MOSFET
Parameter
Max.
25
18
100
57
0.38
± 16
61
94
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
dv/dt
T
J
T
STG
See Fig.12a, 12b, 15, 16
A
mJ
V/ns
3.4
-55 to + 175
300 (1.6mm from case )
Absolute Maximum Ratings
Specifically designed for Automotive applications, this HEXFET Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRLU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
Description
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
PD - 95553A
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| IRLU3105PbF | AUTOMOTIVE MOSFET |
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| IRLR3705Z | Specifically designed for Automotive applications,this HEXFET Power MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLR3105TRLPBF | 功能描述:MOSFET MOSFT 55V 25A 37mOhm 13.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3105TRPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 37mOhms 13.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3110ZPBF | 功能描述:MOSFET 100V HEXFET 14mOhms 15nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLR3110ZPBF_09 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Advanced Process Technology, Ultra Low On-Resistance, 175C Operating Temperature |
| IRLR3110ZTRLPBF | 功能描述:MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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