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參數資料
型號: IRS2103PBF
廠商: International Rectifier
英文描述: HALF-BRIDGE DRIVER
中文描述: 半橋驅動器
文件頁數: 1/14頁
文件大小: 338K
代理商: IRS2103PBF
Data Sheet No. PD60263
Typical Connection
Product Summary
V
OFFSET
600 V max.
I
O
+/-
130 mA/270 mA
V
OUT
10 V - 20 V
t
on/off
(typ.)
680 ns/150 ns
Deadtime (typ.)
520 ns
HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt
immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout
3.3 V, 5 V, and 15 V logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set deadtime
High side output in phase with HIN input
Low side output out of phase with
input
Description
The IRS2103 is a high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output, down
to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-
conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side
configuration which operates up to 600 V.
www.irf.com
1
IRS2103(S)PbF
(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only. Please refer to
our Application Notes and DesignTips for proper circuit board layout.
Packages
8-Lead PDIP
IRS2103
8-Lead SOIC
IRS2103S
相關PDF資料
PDF描述
IRS2103SPBF HALF-BRIDGE DRIVER
IRS2103STRPBF HALF-BRIDGE DRIVER
IRS2117PBF SINGLE CHANNEL DRIVER
IRS2118PbF Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status:   Remarks:  
IRS2118SPbF Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (44); Status:   Remarks:  
相關代理商/技術參數
參數描述
IRS2103SPBF 功能描述:功率驅動器IC HALF BRDG DRVR 600V 130mA 680ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2103STRPBF 功能描述:功率驅動器IC Hlf Brdg Drvr Hi&Lw Sd Inpt 520ns RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2104PBF 功能描述:功率驅動器IC Hlf Brdg Drvr Sngl + Invrt ShutDwn Pin RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2104SPBF 功能描述:功率驅動器IC HALF BRDG DRVR 600V 680ns 130mA RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IRS2104STRPBF 功能描述:功率驅動器IC Hlf Brdg Drvr Sngl + Invrt ShutDwn Pin RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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