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參數資料
| 型號： | IS41C16100S-60TI |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬× 16（16兆）動態與江戶頁面模式內存 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 533K |
| 代理商： | IS41C16100S-60TI |
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
FEATURES
Extended Data-Out (EDO) Page Mode access cycle
TTL compatible inputs and outputs; tristate I/O
Refresh Interval:
Refresh Mode
: 1,024 cycles /16 ms
RAS
-Only,
CAS
-before-
RAS
(CBR), and Hidden
Self refresh Mode
- 1,024 cycles / 128ms
JEDEC standard pinout
Single power supply:
5V ± 10% (IS41C16100S)
3.3V ± 10% (IS41LV16100S)
Byte Write and Byte Read operation via two
CAS
Industrail Temperature Range -40°C to 85°C
DESCRIPTION
The
ICSI
IS41C16100S and IS41LV16100S are 1,048,576 x
16-bit high-performance CMOS Dynamic Random Access
Memories. These devices offer an accelerated cycle access
called EDO Page Mode. EDO Page Mode allows 1,024 ran-
dom accesses within a single row with access cycle time as
short as 20 ns per 16-bit word. The Byte Write control, of upper
and lower byte, makes the IS41C16100S ideal for use in
16-, 32-bit wide data bus systems.
These features make the IS41C16100Sand IS41LV16100S
ideally suited for high-bandwidth graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
The IS41C16100S and IS41LV16100S are packaged in a
42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2.
IS41C16100S
IS41LV16100S
1M x 16 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
EY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
-45
(1)
-50
-60
Unit
45
50
60
ns
11
13
15
ns
Max. Column Address Access Time (t
AA
)
22
25
30
ns
Min. EDO Page Mode Cycle Time (t
PC
)
16
20
25
ns
Min. Read/Write Cycle Time (t
RC
)
77
84
104
ns
42-Pin SOJ
PIN CONFIGURATIONS
50(44)-Pin TSOP II
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A9
Address Inputs
I/O0-15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
28
27
26
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
Integrated Circuit Solution Inc.
1
DR004-0B
Note:
1. 45 ns Only for Vcc = 3.3V.
相關PDF資料 |
PDF描述 |
|---|---|
| IS41LV16100S-45K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16100S-45T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41C16105 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50KE | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41C16105-50T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
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