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參數資料
型號: IS41C16100S-60TI
英文描述: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
中文描述: 100萬× 16(16兆)動態與江戶頁面模式內存
文件頁數: 5/20頁
文件大小: 533K
代理商: IS41C16100S-60TI
IS41C16100S
IS41LV16100S
Integrated Circuit Solution Inc.
5
DR004-0B
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
T
Voltage on Any Pin Relative to GND
5V
–1.0 to +7.0
V
3.3V
–0.5 to +4.6
V
CC
Supply Voltage
5V
–1.0 to +7.0
V
3.3V
–0.5 to +4.6
I
OUT
Output Current
50
mA
P
D
Power Dissipation
1
W
T
A
Commercial Operation Temperature
0 to +70
°C
Industrial Operationg Temperature
–40 to +85
°C
T
STG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
5V
4.5
5.0
5.5
V
3.3V
5V
3.3V
5V
3.3V
3.0
3.3
3.6
V
IH
Input High Voltage
2.4
V
CC
+ 1.0
V
2.0
V
CC
+ 0.3
V
IL
Input Low Voltage
–1.0
0.8
V
–0.3
0.8
T
A
Commercial Ambient Temperature
0
70
°C
Industrial Ambient Temperature
–40
85
°C
CAPACITANCE
(1,2)
Symbol
Parameter
Max.
Unit
C
IN
1
Input Capacitance: A0-A9
Input Capacitance:
RAS
,
UCAS
,
LCAS
,
WE
,
OE
5
pF
C
IN
2
7
pF
C
IO
Data Input/Output Capacitance: I/O0-I/O15
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz.
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