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參數資料
| 型號： | IS41C16256-60KI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 256K X 16 EDO DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, MS-027, SOJ-40 |
| 文件頁數： | 3/20頁 |
| 文件大小： | 215K |
| 代理商： | IS41C16256-60KI |
IS41C16256
IS41LV16256
Integrated Circuit Solution Inc.
DR001-0E 01/25/2002
3
TRUTH TABLE
Function
Standby
Read: Word
Read: Lower Byte
RAS
H
L
L
LCAS
H
L
L
UCAS
H
L
H
WE
X
H
H
OE
X
L
L
Address t
R
/t
C
X
ROW/COL
ROW/COL
I/O
High-Z
D
OUT
Lower Byte, D
OUT
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
OUT
D
IN
Lower Byte, D
IN
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
D
OUT
D
IN
D
IN
D
OUT
, D
IN
D
OUT
, D
IN
D
OUT
D
OUT
High-Z
High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Write: Word (Early Write)
Write: Lower Byte (Early Write)
L
L
L
L
L
H
L
L
X
X
ROW/COL
ROW/COL
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Read-Write
(1,2)
EDO Page-Mode Read
(2)
L
L
L
L
L
L
L
L
L
L
H
→
L
H
H
H
L
L
H
→
L
H
→
L
H
L
X
X
L
→
H
L
L
L
X
X
L
→
H
L
→
H
L
X
X
X
ROW/COL
ROW/COL
NA/COL
NA/NA
ROW/COL
NA/COL
ROW/COL
NA/COL
ROW/COL
ROW/COL
ROW/NA
X
1st Cycle:
2nd Cycle:
Any Cycle:
1st Cycle:
2nd Cycle:
1st Cycle:
2nd Cycle:
Read L
→
H
→
L
Write L
→
H
→
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
H
→
L
H
→
L
L
→
H
H
→
L
H
→
L
H
→
L
H
→
L
L
L
H
L
EDO Page-Mode Write
(1)
EDO Page-Mode
Read-Write
(1,2)
Hidden Refresh
(2)
RAS
-Only Refresh
CBR Refresh
(3)
L
H
→
L
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either
LCAS
or
UCAS
active).
2. These READ cycles may also be BYTE READ cycles (either
LCAS
or
UCAS
active).
3. At least one of the two
CAS
signals must be active (
LCAS
or
UCAS
).
相關PDF資料 |
PDF描述 |
|---|---|
| IS41C16256-60T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16256-60TI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C1664-30T | 64K x 16 bit Dynamic RAM with EDO Page Mode |
| IS41C4100-35T | 1Mx4 bit Dynamic RAM with EDO Page Mode |
| IS41C44002A | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41C16256-60T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16256-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16256C | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Mb DRAM WITH EDO PAGE MODE |
| IS41C16256C-35TLI | 功能描述:動態隨機存取存儲器 4M, 5V, EDO 動態隨機存取存儲器 35ns, 40 pin TSOP II RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41C16256C-35TLI-TR | 功能描述:動態隨機存取存儲器 4M, 5V, EDO 動態隨機存取存儲器 Async,256Kx16,35ns RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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