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參數資料
| 型號： | IS41LV16256-60T |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 256K × 16（4兆位）的動態與江戶頁面模式內存 |
| 文件頁數： | 6/20頁 |
| 文件大小： | 215K |
| 代理商： | IS41LV16256-60T |
IS41C16256
IS41LV16256
6
Integrated Circuit Solution Inc.
DR001-0E 01/25/2002
ELECTRICAL CHARACTERISTICS
(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
Any input 0V < V
IN
< Vcc
Other inputs not under test = 0V
–10
10
μA
I
IO
Output Leakage Current
Output is disabled (Hi-Z)
0V < V
OUT
< Vcc
–10
10
μA
V
OH
Output High Voltage Level
I
OH
= –2.5 mA
2.4
—
V
V
OL
Output Low Voltage Level
I
OL
=+2.1mA
—
0.4
V
I
CC
1
Standby Current: TTL
RAS
,
LCAS
,
UCAS
> V
IH
Commerical
Industrial
Commerical 3.3V
Industrial
5V
5V
—
—
—
—
2
3
1
2
mA
3.3V
I
CC
2
Standby Current: CMOS
RAS
,
LCAS
,
UCAS
> V
CC
– 0.2V
5V
3.3V
—
—
1
mA
0.5
I
CC
3
Operating Current:
Random Read/Write
(2,3,4)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
,
Address Cycling, t
RC
= t
RC
(min.)
-25
-35
-50
-60
—
—
—
—
260
230
180
170
mA
I
CC
4
Operating Current:
EDO Page Mode
(2,3,4)
Average Power Supply Current
RAS
= V
IL
,
LCAS
,
UCAS
,
Cycling t
PC
= t
PC
(min.)
-25
-35
-50
-60
—
—
—
—
250
220
170
160
mA
I
CC
5
Refresh Current:
RAS
-Only
(2,3)
Average Power Supply Current
RAS
Cycling,
LCAS
,
UCAS
> V
IH
t
RC
= t
RC
(min.)
-25
-35
-50
-60
—
—
—
—
260
230
180
170
mA
I
CC
6
Refresh Current:
CBR
(2,3,5)
Average Power Supply Current
RAS
,
LCAS
,
UCAS
Cycling
t
RC
= t
RC
(min.)
-25
-35
-50
-60
—
—
—
—
260
230
180
170
mA
Notes:
1. An initial pause of 200 μs is required after power-up followed by eight
RAS
refresh cycles (
RAS
-Only or CBR) before proper device
operation is assured. The eight
RAS
cycles wake-up should be repeated any time the t
REF
refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
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PDF描述 |
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| IS41C16256-25K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16256-25KI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16256-25T | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16256-25TI | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41C16256-35K | 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41LV16256-60TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS41LV16256B-35K | 功能描述:動態隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16256B-35KL | 功能描述:動態隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16256B-35KL-TR | 功能描述:動態隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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