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參數資料
| 型號： | IS41LV16257-60TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| 中文描述： | 256K X 16 FAST PAGE DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, TSOP2-40 |
| 文件頁數： | 1/17頁 |
| 文件大小： | 160K |
| 代理商： | IS41LV16257-60TI |
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. Copyright 1999, Integrated Silicon Solution, Inc.
FEATURES
Fast access and cycle time
TTL compatible inputs and outputs
Refresh Interval: 512 cycles/8 ms
Refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR),
and Hidden
JEDEC standard pinout
Single power supply:
-- 5V
±
10% (IS41C16257)
-- 3.3V
±
10% (IS41LV16257)
Byte Write and Byte Read operation via two
CAS
Industrial temperature available
DESCRIPTION
The
ISSI
IS41C16257 and the IS41LV16257 are 262,144
x 16-bit high-performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 512 random accesses
within a single row with access cycle time as short as 12 ns
per 16-bit word. The Byte Write control, of upper and lower
byte, makes these devices ideal for use in 16- and 32-bit
wide data bus systems.
These features make the IS41C16257 and the IS41LV16257
ideally suited for high band-width graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
The IS41C16257 and the IS41LV16257 are packaged in a
40-pin, 400-mil SOJ and TSOP (Type II).
IS41C16257
IS41LV16257
256K x 16 (4-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
MAY 1999
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
DR004-1B
05/24/99
1
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. Fast Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-35
35
10
18
12
60
-60
60
15
30
25
110
Unit
ns
ns
ns
ns
ns
相關PDF資料 |
PDF描述 |
|---|---|
| IS41LV16400 | 4M x 16 DRAM With EDO Page Mode(3.3V,4M x 16 帶擴展數據輸出頁模式動態RAM) |
| IS41LV32256 | 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32帶擴展數據輸出動態RAM) |
| IS42G32256-10PQ | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
| IS42G32256-7PQ | POT 10K OHM 9MM VERT NO BUSHING |
| IS42G32256-8PQ | 256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41LV16257B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
| IS41LV16257B-35K | 功能描述:動態隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16257B-35KL | 功能描述:動態隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16257B-35KL-TR | 功能描述:動態隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS41LV16257B-35K-TR | 功能描述:動態隨機存取存儲器 4M 256Kx16 35ns RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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