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參數資料
| 型號： | IS41LV1665-40K |
| 英文描述： | 64K x16 bit Dynamic RAM with Fast Page Mode |
| 中文描述： | 64K的x16位動態隨機存儲器和快速頁面模式 |
| 文件頁數： | 2/19頁 |
| 文件大小： | 388K |
| 代理商： | IS41LV1665-40K |
IC41C1665
IC41LV1665
2
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
FEATURES
Fast access and cycle time
TTL compatible inputs and outputs
Refresh Interval: 256 cycles/4 ms
Refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR), Hidden
JEDEC standard pinout
Single power supply:
— 5V ± 10% (IC41C1665)
— 3.3V ± 10% (IC41LV1665)
Byte Write and Byte Read operation via
two
CAS
Available in 40-pin SOJ and TSOP-2
DESCRIPTION
The
ICSI
IC41C1665 and the IC41LV1665 are 65,536 x 16-
bit high-performance CMOS Dynamic Random Access
Memory. Fast Page Mode allows 256 random accesses
within a single row with access cycle time as short as 12 ns
per 16-bit word. The Byte Write control, of upper and lower
byte, makes these devices ideal for use in 16-, 32-bit wide
data bus systems.
These features make the IC41C1665 and the IC41LV1665
ideally suited for high band-width graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
The IC41C1665 and the IC41LV1665 are packaged in a 40-
pin, 400mil SOJ and TSOP-2.
64K x 16 (1-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
NC
A7
A6
A5
A4
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
A0
A1
A2
A3
VCC
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
NC
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A7
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address
Strobe
LCAS
Lower Column Address
Strobe
Vcc
Power
GND
Ground
NC
No Connection
40-Pin SOJ
PIN CONFIGURATIONS
40-Pin TSOP-2
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. Fast Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-25
25
8
12
15
43
-30
30
9
16
20
55
-35
35
10
18
23
65
-40
40
11
20
25
75
Unit
ns
ns
ns
ns
ns
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| IS41LV44002-50TI | x4 EDO Page Mode DRAM |
| IS41LV44002-60J | x4 EDO Page Mode DRAM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS41LV32256 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-28PQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-28TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
| IS41LV32256-30PQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 EDO Page Mode DRAM |
| IS41LV32256-30TQ | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz |
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