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參數資料
| 型號： | IS42S16800A-7B |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數： | 21/66頁 |
| 文件大小： | 556K |
| 代理商： | IS42S16800A-7B |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
ADVANCED INFORMATION
Rev. 00A
06/01/02
21
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
AC ELECTRICAL CHARACTERISTICS
(1,2,3)
-7
-10
Symbol
Parameter
Min.
Max.
Min.
Max
Units
t
CK3
t
CK2
Clock Cycle Time
CAS
Latency = 3
CAS
Latency = 2
7
—
—
10
10
—
—
ns
ns
10
t
AC3
t
AC2
Access Time From CLK
(4)
CAS
Latency = 3
CAS
Latency = 2
—
—
5.4
6
—
—
7
9
ns
ns
t
CHI
CLK HIGH Level Width
2.5
—
3.5
—
ns
t
CL
CLK LOW Level Width
2.5
—
3.5
—
ns
t
OH3
t
OH2
Output Data Hold Time
CAS
Latency = 3
CAS
Latency = 2
2.5
2.5
—
—
2.5
2.5
—
—
ns
ns
t
LZ
Output LOW Impedance Time
0
—
0
—
ns
t
HZ3
t
HZ2
Output HIGH Impedance Time
(5)
CAS
Latency = 3
—
—
6
6
—
—
7
9
ns
ns
CAS
Latency = 2
t
DS
Input Data Setup Time
1.5
—
2.0
—
ns
t
DH
Input Data Hold Time
0.8
—
1
—
ns
t
AS
Address Setup Time
.5
—
2.0
—
ns
t
AH
Address Hold Time
0.8
—
1
—
ns
t
CKS
CKE Setup Time
1.5
—
2.0
—
ns
t
CKH
CKE Hold Time
0.8
—
1
—
ns
t
CKA
CKE to CLK Recovery Delay Time
1CLK+3
—
1CLK+3
—
ns
t
CS
Command Setup Time (
CS
,
RAS
,
CAS
,
WE
, DQM)
1.5
—
2.0
—
ns
t
CH
Command Hold Time (
CS
,
RAS
,
CAS
,
WE
, DQM)
0.8
—
1
—
ns
t
RC
Command Period (REF to REF / ACT to ACT)
63
—
70
—
ns
t
RAS
Command Period (ACT to PRE)
37
120,000
44
120,000
ns
t
RP
Command Period (PRE to ACT)
15
—
18
—
ns
t
RCD
Active Command To Read / Write Command Delay Time
15
—
18
—
ns
t
RRD
Command Period (ACT [0] to ACT[1])
14
—
15
—
ns
t
DPL3
Input Data To Precharge
Command Delay time
CAS
Latency = 3
2CLK
—
2CLK
—
ns
t
DPL2
CAS
Latency = 2
2CLK
—
2CLK
—
ns
t
DAL3
Input Data To Active / Refresh
CAS
Latency = 3
Command Delay time (During Auto-Precharge)
CLK+t
RP
—
2CLK+t
RP
—
ns
t
DAL2
CAS
Latency = 2
2CLK+t
RP
—
2CLK+t
RP
—
ns
t
T
Transition Time
0.5
30
0.5
30
ns
t
REF
Notes:
1. When power is first applied, memory operation should be started 100 μs after Vdd and Vdd
Q
reach their stipulated voltages.
Also note that the power-on sequence must be executed before starting memory operation.
2. Measured with t
T
= 1 ns.
3. The reference level is 0.9V when measuring input signal timing. Rise and fall times are measured between V
IH
(min.) and V
IL
(max.).
4. Access time is measured at 0.9V with the load shown in the figure below.
5. The time t
HZ
(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V
OH
(min.) or V
OL
(max.)
when the output is in the high impedance state.
Refresh Cycle Time (4096)
—
64
—
64
ms
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS42S16800A-7BI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7BL | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS42S16800A-7T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S16800A-7TL | 制造商:Integrated Silicon Solution Inc 功能描述: |
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