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參數資料
| 型號： | IS45LV44002B |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 4米× 4（16兆）動態與江戶頁面模式內存 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 137K |
| 代理商： | IS45LV44002B |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
09/12/05
1
IS45LV44002B
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Extended Data-Out (EDO) Page Mode access cycle
TTL compatible inputs and outputs
Refresh Interval:
– 2,048 cycles/32 ms
Refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR), and Hidden
Single power supply: 3.3V ± 10%
Byte Write and Byte Read operation via two
CAS
Automotive Temperature Range
Option A1: -40°C to +85°C
Lead-free available
DESCRIPTION
The
ISSI
IS45LV44002B is 4,194,304 x 4-bit high-performance
CMOS Dynamic Random Access Memory. These de-
vices offer an accelerated cycle access called EDO Page
Mode. EDO Page Mode allows 2,048 random accesses
within a single row with access cycle time as short as 20 ns
per 4-bit word.
These features make the
IS45LV44002B
ideally suited for
high-bandwidth graphics, digital signal processing, high-
performance computing systems, and peripheral
applications.
The IS45LV44002B is packaged in a 24-pin 300-mil SOJ
with JEDEC standard pinouts.
4M x 4 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
SEPTEMBER 2005
KEY TIMING PARAMETERS
Parameter
-50
Unit
RAS
Access Time (t
RAC
)
50
ns
CAS
Access Time (t
CAC
)
13
ns
Column Address Access Time (t
AA
)
25
ns
EDO Page Mode Cycle Time (t
PC
)
20
ns
Read/Write Cycle Time (t
RC
)
84
ns
PRODUCT SERIES OVERVIEW
Part No.
Refresh
Voltage
IS45LV44002B
2K
3.3V ± 10%
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VDD
I/O0
I/O1
WE
RAS
NC
A10
A0
A1
A2
A3
VDD
GND
I/O3
I/O2
CAS
OE
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A10
Address Inputs
I/O0-3
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
CAS
Column Address Strobe
V
DD
Power
GND
Ground
NC
No Connection
PIN CONFIGURATION: 24-pin SOJ
相關PDF資料 |
PDF描述 |
|---|---|
| IS45LV44002B-50JA1 | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS45LV44002B-50JLA1 | 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS45S16100C1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS45LV44002B-50JA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS45LV44002B-50JLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| IS45S | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC PNP NC |
| IS45S16100C1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16100C1-7BLA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM |
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