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參數資料
| 型號： | IS45S16400C1 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1梅格位× 16位× 4銀行（64兆位）同步動態RAM |
| 文件頁數： | 1/55頁 |
| 文件大小： | 504K |
| 代理商： | IS45S16400C1 |
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Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
10/25/05
1
IS45S16400C1
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT)
SYNCHRONOUS DYNAMIC RAM
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
FEATURES
Clock frequency: 143 MHz
Fully synchronous; all signals referenced to a
positive clock edge
Internal bank for hiding row access/precharge
Single 3.3V power supply
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
Self refresh modes
4096 refresh cycles every 64 ms
Random column address every clock cycle
Programmable
CAS
latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and precharge
command
Byte controlled by LDQM and UDQM
Automotive Temperature Range
Option A: 0
o
C to +70
o
C
Option A1: -40
o
C to +85
o
C
Package:
400-mil 54-pin TSOP II
Lead-free package is available
OVERVIEW
ISSI
's 64Mb Synchronous DRAM IS45S16400C1 is
organized as 1,048,576 bits x 16-bit x 4-bank for improved
performance. The synchronous DRAMs achieve high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
OCTOBER 2005
PIN CONFIGURATIONS
54-Pin TSOP (Type II)
VDD
DQ0
VDDQ
DQ1
DQ2
GNDQ
DQ3
DQ4
VDDQ
DQ5
DQ6
GNDQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
GND
DQ15
GNDQ
DQ14
DQ13
VDDQ
DQ12
DQ11
GNDQ
DQ10
DQ9
VDDQ
DQ8
GND
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A11
Address Input
BA0, BA1
Bank Select Address
DQ0 to DQ15
Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
WE
Write Enable
LDQM
Lower Bye, Input/Output Mask
UDQM
Upper Bye, Input/Output Mask
V
DD
Power
GND
Ground
V
DD
Q
Power Supply for DQ Pin
GND
Q
Ground for DQ Pin
NC
No Connection
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| IS45S16400C1-7TA1 | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16400C1-7TLA | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16400C1-7TLA1 | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16800B | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
| IS45S16800B-7TA | 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS45S16400C1-7TA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16400C1-7TLA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16400C1-7TLA1 | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS45S16400E | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S16400E-6TLA1 | 功能描述:動態隨機存取存儲器 64M (4Mx16) 166MHz S動態隨機存取存儲器 3.3v RoHS:否 制造商:ISSI 數據總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
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