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參數資料
型號: IS61C64AH
英文描述: 8K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 8K的× 8高速CMOS靜態RAM
文件頁數: 3/8頁
文件大小: 433K
代理商: IS61C64AH
IS61C64AH
Integrated Circuit Solution Inc.
3
SR001-B
1
2
3
4
5
6
7
8
9
10
11
12
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.5
0.8
V
I
LI
Input Leakage
GND
V
IN
V
CC
GND
V
OUT
V
CC
, Outputs Disabled
–2
2
μA
I
LO
Output Leakage
–2
2
μA
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-15 ns
Min. Max.
-20 ns
Min. Max.
-25 ns
Min. Max.
Symbol
Parameter
Test Conditions
Unit
I
CC
Vcc Dynamic Operating
V
CC
= Max.,
135
120
110
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
I
SB
1
TTL Standby Current
V
CC
= Max.,
20
20
20
mA
(TTL Inputs)
V
IN
= V
IH
or V
IL
CE1
V
IH
or
CE2
V
IL
, f = 0
I
SB
2
CMOS Standby
V
CC
= Max.,
CE1
V
CC
– 0.2V,
CE2
0.2V,
V
IN
V
CC
– 0.2V, or
V
IN
0.2V, f = 0
6
6
6
mA
Current (CMOS Inputs)
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
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