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參數資料
型號: IS61C64AH
英文描述: 8K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 8K的× 8高速CMOS靜態RAM
文件頁數: 4/8頁
文件大小: 433K
代理商: IS61C64AH
IS61C64AH
4
Integrated Circuit Solution Inc.
SR001-B
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-15 ns
-20 ns
Min.
-25 ns
Min.
Symbol
Parameter
Min.
Max.
Max.
Max.
Unit
t
RC
Read Cycle Time
15
20
25
ns
t
AA
Address Access Time
15
20
25
ns
t
OHA
Output Hold Time
3
3
3
ns
t
ACE
1
CE1
Access Time
15
20
25
ns
t
ACE
2
CE2 Access Time
15
20
25
ns
t
DOE
OE
Access Time
7
7
9
ns
t
LZOE
(2)
OE
to Low-Z Output
0
0
0
ns
t
HZOE
(2)
OE
to High-Z Output
6
7
9
ns
t
LZCE
1
(2)
CE1
to Low-Z Output
3
3
3
ns
t
LZCE
2
(2)
CE2 to Low-Z Output
3
3
3
ns
t
HZCE
(2)
CE1
or CE2 to High-Z Output
8
10
12
ns
t
PU
(3)
CE1
or CE2 to Power-Up
0
0
0
ns
t
PD
(3)
CE1
or CE2 to Power-Down
15
20
20
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Unit
Input Pulse Level
0V to 3.0V
Input Rise and Fall Times
3 ns
Input and Output Timing
1.5V
and Reference Level
Output Load
See Figures 1 and 2
AC TEST LOADS
Figure 1.
Figure 2.
480
30 pF
Including
jig and
scope
255
OUTPUT
5V
480
5 pF
Including
jig and
scope
255
OUTPUT
5V
相關PDF資料
PDF描述
IS61C64AH-15J 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AH-15U 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AH-20J 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AH-20U 8K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C64AH-25J 8K x 8 HIGH-SPEED CMOS STATIC RAM
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