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參數資料
| 型號： | IS61LV256AL-10T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 10 ns, PDSO28 |
| 封裝： | 8 X 13.40 MM, MO-183, TSOP1-28 |
| 文件頁數： | 1/13頁 |
| 文件大小： | 105K |
| 代理商： | IS61LV256AL-10T |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06
1
IS61LV256AL
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
FEATURES
High-speed access times:
— 10 ns
Automatic power-down when chip is deselected
CMOS low power operation
— 60 μW (typical) CMOS standby
— 65 mW (typical) operating
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three-state outputs
Lead-free available
DESCRIPTION
The
ISSI
IS61LV256AL is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns maximum.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation is reduced to
150 μW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Enable (
CE
). The active LOW Write Enable
(
WE
) controls both writing and reading of the memory.
The IS61LV256AL is available in the JEDEC standard 28-
pin, 300-mil SOJ and the 450-mil TSOP (Type I) packages.
32K x 8 LOW VOLTAGE
CMOS STATIC RAM
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
32K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
MARCH 2006
相關PDF資料 |
PDF描述 |
|---|---|
| IS61LV256 | 32K x 8 Low Voltage High-Speed CMOS Static RAM(32K x 8低壓高速CMOS靜態RAM) |
| IS61LV3216 | 32K x 16 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV51216 | 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV51216-10MLI | 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS61LV51216-8TL | 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61LV256AL-10TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256AL-10TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256AL-10TLI | 功能描述:靜態隨機存取存儲器 256K 32Kx8 10ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV256AL-10TLI-TR | 功能描述:靜態隨機存取存儲器 256K 32Kx8 10ns Async 靜態隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61LV256L-15J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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