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參數資料
| 型號： | IS61SP6464-117PQ |
| 英文描述： | SYNC SRAM|64KX64|CMOS|QFP|128PIN|PLASTIC |
| 中文描述： | 同步靜態存儲器| 64KX64 |的CMOS | QFP封裝| 128PIN |塑料 |
| 文件頁數： | 5/16頁 |
| 文件大小： | 108K |
| 代理商： | IS61SP6464-117PQ |
IS61SF25616
IS61SF25618
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
5
TRUTH TABLE
Address
Used
Operation
CE
CE2
CE2
ADSP
ADSC
ADV
WRITE
OE
DQ
Deselected, Power-down
Deselected, Power-down
Deselected, Power-down
Deselected, Power-down
Deselected, Power-down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
None
None
None
None
None
External
External
External
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
H
L
L
X
X
L
L
L
X
X
H
H
X
H
X
X
H
H
X
H
X
X
L
X
L
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
H
X
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
H
H
L
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L
X
X
L
L
X
L
L
H
H
H
H
H
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
L
L
L
L
L
L
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
H
L
H
X
X
L
H
L
H
X
X
High-Z
High-Z
High-Z
High-Z
High-Z
Q
Q
D
Q
High-Z
Q
High-Z
D
D
Q
High-Z
Q
High-Z
D
D
Read
Write
Read
Read
Read
Read
Write
Write
Read
Read
Read
Read
Write
Write
PARTIAL TRUTH TABLE
Function
GW
BWE
BW1
BW2
Read
Read
Write Byte 1
Write All Bytes
Write All Bytes
H
H
H
H
L
H
L
L
L
X
X
H
L
L
X
X
H
H
L
X
相關PDF資料 |
PDF描述 |
|---|---|
| IS61SP6464-117PQI | x64 Fast Synchronous SRAM |
| IS61SP6464-117TQ | x64 Fast Synchronous SRAM |
| IS61SP6464-117TQI | x64 Fast Synchronous SRAM |
| IS61SP6464-133PQ | x64 Fast Synchronous SRAM |
| IS61SP6464-133TQ | x64 Fast Synchronous SRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS61SP6464-6TQ | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS61VF102418A-6.5B3 | 功能描述:靜態隨機存取存儲器 18Mb,Flow-Through,Sync,1Mb x 18,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61VF102418A-6.5B3I | 功能描述:靜態隨機存取存儲器 18Mb,Flow-Through,Sync,1Mb x 18,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61VF102418A-6.5B3I-TR | 功能描述:靜態隨機存取存儲器 18Mb,Flow-Through,Sync,1Mb x 18,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS61VF102418A-6.5B3-TR | 功能描述:靜態隨機存取存儲器 18Mb,Flow-Through,Sync,1Mb x 18,6.5ns,2.5v I/O,165 Ball BGA RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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