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參數資料
型號: IS62C1024-35T
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述: 128K X 8 STANDARD SRAM, 35 ns, PDSO32
封裝: TSOP1-32
文件頁數: 3/8頁
文件大小: 423K
代理商: IS62C1024-35T
Integrated Circuit Solution Inc.
3
SR016-0B
IS62C1024
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
–0.5 to +7.0
V
T
BIAS
Temperature Under Bias
–10 to +85
°C
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.5
W
I
OUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –1.0 mA
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 2.1 mA
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
CC
Com.
–5
5
μA
Ind.
–10
10
I
LO
Output Leakage
GND
V
OUT
V
CC
Com.
–5
5
μA
Ind.
–10
10
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-35 ns
Min. Max.
-45 ns
Min. Max.
-55 ns
Min. Max.
-70 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
I
CC
Vcc Dynamic Operating
V
CC
= Max.,
CE
= V
IL
Com.
150
135
120
90
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
160
145
130
100
I
SB
1
TTL Standby Current
V
CC
= Max.,
V
IN
= V
IH
or V
IL
,
CE1
V
IH
,
or CE2
V
IL
, f = 0
Com.
40
40
40
40
mA
(TTL Inputs)
Ind.
60
60
60
60
I
SB
2
CMOS Standby
V
CC
= Max.,
CE1
V
CC
– 0.2V,
CE2
0.2V, V
IN
> V
CC
– 0.2V,
or V
IN
0.2V, f = 0
Com.
30
30
30
30
mA
Current (CMOS Inputs)
Ind.
40
40
40
40
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
相關PDF資料
PDF描述
IS62C1024-35TI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45Q 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45T 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
IS62C1024-35QI 128K x 8 HIGH-SPEED CMOS STATIC RAM
相關代理商/技術參數
參數描述
IS62C1024-35TI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-35W 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-35WI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45Q 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45QI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
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