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參數資料
| 型號： | IS62C1024AL-35T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 35 ns, PDSO32 |
| 封裝： | 20 X 8 MM, TSOP1-32 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 423K |
| 代理商： | IS62C1024AL-35T |
Integrated Circuit Solution Inc.
3
SR016-0B
IS62C1024
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
–0.5 to +7.0
V
T
BIAS
Temperature Under Bias
–10 to +85
°C
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.5
W
I
OUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –1.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 2.1 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
–5
5
μA
Ind.
–10
10
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
Com.
–5
5
μA
Ind.
–10
10
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-35 ns
Min. Max.
-45 ns
Min. Max.
-55 ns
Min. Max.
-70 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
I
CC
Vcc Dynamic Operating
V
CC
= Max.,
CE
= V
IL
Com.
—
150
—
135
—
120
—
90
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
—
160
—
145
—
130
—
100
I
SB
1
TTL Standby Current
V
CC
= Max.,
V
IN
= V
IH
or V
IL
,
CE1
≥
V
IH
,
or CE2
≤
V
IL
, f = 0
Com.
—
40
—
40
—
40
—
40
mA
(TTL Inputs)
Ind.
—
60
—
60
—
60
—
60
I
SB
2
CMOS Standby
V
CC
= Max.,
CE1
≥
V
CC
– 0.2V,
CE2
≤
0.2V, V
IN
> V
CC
– 0.2V,
or V
IN
≤
0.2V, f = 0
Com.
—
30
—
30
—
30
—
30
mA
Current (CMOS Inputs)
Ind.
—
40
—
40
—
40
—
40
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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| IS62C1024AL-35TI | 128K x 8 LOW POWER CMOS STATIC RAM |
| IS62C1024AL-35TLI | 128K x 8 LOW POWER CMOS STATIC RAM |
| IS62C1024-45QI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
| IS62C1024-70QI | 128K x 8 HIGH-SPEED CMOS STATIC RAM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS62C1024AL-35TI | 功能描述:靜態隨機存取存儲器 1Mb 128K x 8 35ns 5v Async 靜態隨機存取存儲器 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62C1024AL-35TI-TR | 功能描述:靜態隨機存取存儲器 1Mb 128K x 8 35ns 5v Async 靜態隨機存取存儲器 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62C1024AL-35TLI | 功能描述:靜態隨機存取存儲器 1Mb 128K x 8 35ns 5v Async 靜態隨機存取存儲器 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62C1024AL-35TLI-TR | 功能描述:靜態隨機存取存儲器 1Mb 128K x 8 35ns 5v Async 靜態隨機存取存儲器 5v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62C1024AL-70QI | 制造商:Integrated Silicon Solution Inc 功能描述: |
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