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參數(shù)資料
| 型號： | IS62U6416LL-20T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 200 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 93K |
| 代理商： | IS62U6416LL-20T |
IS62U6416LL
IS62U6416LL
64K x 16 LOW VOLTAGE,
ULTRA-LOW POWER CMOS STATIC RAM
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
SR034-0C
12/09/98
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FEATURES
Access time: 200 ns
CMOS low power operation
– 40 mW (typical) operating
– 90
μ
W (typical) standby
TTL compatible interface levels
Single 1.8V-2.7V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Available in Jedec Std 44-pin SOJ package,
44-pin TSOP (Type II), and 48-pin mini BGA
DESCRIPTION
The
ISSI
IS62U6416LL is an ultra-low power, 1,048,576-bit
static RAM organized as 65,536 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques yields access times as fast as 200 ns with
low power consumption.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW Write
Enable (
WE
) controls both writing and reading of the memory.
A data byte allows Upper Byte (
UB
) and Lower Byte (
LB
)
access.
FUNCTIONAL BLOCK DIAGRAM
ADVANCE INFORMATION
DECEMBER 1998
The specification contains ADVANCE INFORMATION. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. Copyright 1998, Integrated Silicon Solution, Inc.
A0-A15
CE
OE
WE
UB
LB
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
ISSI
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62U6416LL-20TI | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62V6416BLL | 64K x 16 Low Voltage, Ultra Low Power CMOS SRAM(64K x 16 低壓，極低功耗CMOS靜態(tài)RAM) |
| IS62VV25616L | 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV51216LL | 512K x 16 Low Voltage, 1.8V Ultra Low Power CMOS SRAM(1.8V, 512K x 16 低壓，極低功耗CMOS靜態(tài)RAM) |
| IS62WV10248BLL | 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62U6416LL-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62VV25616L | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
| IS62VV25616LL-70M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62VV25616LL-70MI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62VV25616LL-70T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM |
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