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參數(shù)資料
型號: IS63LV1024-12KI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
中文描述: 128K X 8 STANDARD SRAM, 12 ns, PDSO32
封裝: 0.400 INCH, PLASTIC, SOJ-32
文件頁數(shù): 1/8頁
文件大小: 68K
代理商: IS63LV1024-12KI
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
IS63LV1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
ISSI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. H
10/02/00
1
FEATURES
High-speed access times:
8, 10, 12 and 15 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with
CE
and
OE
options
CE
power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 3.3V power supply
Packages available:
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
DESCRIPTION
The
ISSI
IS63LV1024 is a very high-speed, low power,
131,072-word by 8-bit CMOS static RAM in revolutionary
pinout. The IS63LV1024 is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 μW (typical) with CMOS input levels.
The IS63LV1024 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE
OE
WE
128K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
SEPTEMBER 2000
相關PDF資料
PDF描述
IS63LV1024-12T 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-12TI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-15J 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-15JI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63WV1024BLL 128K x 8 HIGH-SPEED CMOS STATIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
IS63LV1024-12KL 功能描述:靜態(tài)隨機存取存儲器 1Mb 128Kx8 12ns 3.3v Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024-12KL-TR 功能描述:靜態(tài)隨機存取存儲器 1Mb 128Kx8 12ns 3.3v Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024-12KTR 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 12ns 32-Pin SOJ T/R
IS63LV1024-12T 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 12ns 32-Pin TSOP-II 制造商:Integrated Silicon Solution Inc 功能描述:Static RAM, 128Kx8, 32 Pin, Plastic, TSOP
IS63LV1024-12TI 制造商:Integrated Silicon Solution Inc 功能描述:
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