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參數資料
型號: ISO166P
英文描述: Precision, Isolated OPERATIONAL AMPLIFIER
中文描述: 精密,隔離運算放大器
文件頁數: 7/8頁
文件大小: 202K
代理商: ISO166P
7
ISO166/ISO176
ISO176 can also be synchronized to a 400kHz to 700kHz
Square-Wave External Clock since an internal clamp and
filter provide signal conditioning. A square-wave signal of
25% to 75% duty cycle, and
±
3V to
±
20V level can be used
to directly drive the ISO176.
With the addition of the signal conditioning circuit shown in
Figure 2, any 10% to 90% duty-cycle square-wave signal
can be used to drive the ISO166 and ISO176 Ext Osc pin.
With the values shown, the circuit can be driven by a
4Vp-p TTL signal. For a higher or lower voltage input,
increase or decrease the 1k
resistor, R
X
, proportionally,
e.g. for a
±
4V square-wave (8Vp-p) R
X
should be increased
to 2k
. The value of C
X
used in the Figure 2 circuit depends
on the frequency of the external clock signal. C
X
should be
30pF for ISO176 and 680pF for ISO166.
When periodic noise from external sources such as system
clocks and DC/DC converters are a problem, ISO166 and
ISO176 can be used to reject this noise. The amplifier can be
synchronized to an external frequency source, f
EXT
, placing
the amplifier response curve at one of the frequency and
amplitude nulls indicated in the “Signal Response vs Carrier
Frequency” performance curve.
ISOLATION MODE VOLTAGE
Isolation Mode Voltage (IMV) is the voltage appearing
between isolated grounds GND1 and GND2. The IMV can
induce error at the output as indicated by the plots of IMV
versus Frequency. It should be noted that if the IMV fre-
quency exceeds f
C
/2, the output will display spurious out-
puts in a manner similar to that described above, and the
amplifier response will be identical to that shown in the
“Signal Response vs Carrier Frequency” performance curve.
This occurs because IMV-induced errors behave like input-
referred error signals. To predict the total IMR, divide the
isolation voltage by the IMR shown in “IMR vs Frequency”
performance curve and compute the amplifier response to
this input-referred error signal from the data given in the
“Signal Response vs Carrier Frequency” performance curve.
Due to effects of very high-frequency signals, typical IMV
performance can be achieved only when dV/dT of the
isolation mode voltage falls below 1000V/
μ
s. For conve-
nience, this is plotted in the typical performance curves for
the ISO166 and ISO176 as a function of voltage and fre-
quency for sinusoidal voltages. When dV/dT exceeds
1000V/
μ
s but falls below 20kV/
μ
s, performance may be
degraded. At rates of change above 20kV/
μ
s, the amplifier
may be damaged, but the barrier retains its full integrity.
Lowering the power supply voltages below
±
15V may
decrease the dV/dT to 500V/
μ
s for typical performance, but
the maximum dV/dT of 20kV/
μ
s remains unchanged.
Leakage current is determined solely by the impedance of
the barrier capacitance and is plotted in the “Isolation Leak-
age Current vs Frequency” curve.
ISOLATION VOLTAGE RATINGS
Because a long-term test is impractical in a manufacturing
situation, the generally accepted practice is to perform a
production test at a higher voltage for some shorter time.
The relationship between actual test voltage and the continu-
ous derated maximum specification is an important one.
Historically, Burr-Brown has chosen a deliberately conser-
vative one: VTEST = (2 x ACrms continuous rating) +
1000V for 10 seconds, followed by a test at rated ACrms
voltage for one minute. This choice was appropriate for
conditions where system transients are not well defined.
Recent improvements in high-voltage stress testing have
produced a more meaningful test for determining maximum
permissible voltage ratings, and Burr-Brown has chosen to
apply this new technology in the manufacture and testing of
the ISO166 and ISO176.
CARRIER FREQUENCY CONSIDERATIONS
ISO166 and ISO176 amplifiers transmit the signal across the
ISO-barrier by a duty-cycle modulation technique. This
system works like any linear amplifier for input signals
having frequencies below one half the carrier frequency, f
C
.
For signal frequencies above f
C
/2, the behavior becomes
more complex. The Signal Response versus Carrier Fre-
quency performance curve describes this behavior graphi-
cally. The upper curve illustrates the response for input
signals varying from DC to f
C
/2. At input frequencies at or
above f
C
/2, the device generates an output signal component
that varies in both amplitude and frequency, as shown by the
lower curve. The lower horizontal scale shows the periodic
variation in the frequency of the output component. Note
that at the carrier frequency and its harmonics, both the
frequency and amplitude of the response go to zero. These
characteristics can be exploited in certain applications.
It should be noted that for the ISO176, the carrier frequency
is nominally 500kHz and the –3dB point of the amplifier is
60kHz. Spurious signals at the output are not significant
under these circumstances unless the input signal contains
significant components above 250kHz.
For the ISO166, the carrier frequency is nominally 110kHz
and the –3dB point of the amplifier is 6kHz.
FIGURE 2. Square-Wave to Triangle Wave Signal Condi-
tioner for Driving ISO166/176 Ext Osc Pin.
10k
C
X
OPA602
R
X
1k
1μF
Square-Wave In
Triangle Out
to ISO166/176
Ext Osc
相關PDF資料
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