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參數資料
| 型號： | ITF86110DK8T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET |
| 中文描述： | 30 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數： | 1/13頁 |
| 文件大?。?/td> | 200K |
| 代理商： | ITF86110DK8T |
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
SABER is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207
|
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000
File Number
4807.2
ITF86110DK8T
7.5A, 30V, 0.025 Ohm, Dual N-Channel,
Logic Level, Power MOSFET
Packaging
SO8 (JEDEC MS-012AA)
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.025
,
V
GS
=
10V
- r
DS(ON)
= 0.034
,
V
GS
=
4.5V
- r
DS(ON)
= 0.042
,
V
GS
=
4.0V
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
BRANDING DASH
1
2
3
4
5
GATE1(2)
DRAIN1(8)
DRAIN1(7)
SOURCE1(1)
DRAIN2(6)
DRAIN2(5)
SOURCE2(3)
GATE2(4)
PART NUMBER
PACKAGE
BRAND
ITF86110DK8T
SO8
86110
NOTE: When ordering, use the entire part number. ITF86110DK8T
is available only in tape and reel.
ITF86110DK8T
30
30
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
7.5
6.5
2.0
1.5
Figure 4
2.5
20
-55 to 150
A
A
A
A
A
W
mW/
o
C
o
C
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.14 in
2
(90.3 mm
2
) copper pad at 1 second.
3. 228
o
C/W measured using FR-4 board with 0.006 in
2
(3.9 mm
2
) copper pad at 1000 second.
Data Sheet
January 2000
[ /Title
(HUF7
6400S
K8)
/Sub-
ject
(60V,
0.072
Ohm,
4A, N-
Chan-
nel,
Logic
Level
UltraFE
T
Power
MOS-
FET)
/Author
()
/Key-
words
(Inter-
sil
Semi-
conduc-
tor, N-
Chan-
nel,
Logic
Level
UltraFE
T
Power
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