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參數資料
| 型號： | ITF86116SQT2 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | TSSOP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 9A條（丁）| TSSOP封裝 |
| 文件頁數： | 2/12頁 |
| 文件大小： | 199K |
| 代理商： | ITF86116SQT2 |
2
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
-
-
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
10
μ
A
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
1.0
-
2.5
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 10.0A, V
GS
= 10V (Figures 8, 9)
-
0.0086
0.012
I
D
= 5.0A, V
GS
= 4.5V (Figure 8)
-
0.011
0.016
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
R
θ
JA
Pad Area = 1.00 in
2
(645.2 mm
2
) (Note 2)
-
-
62.5
o
C/W
Pad Area = 0.035 in
2
(22.4 mm
2
) (Figure 20)
-
-
165.4
o
C/W
Pad Area = 0.0045 in
2
(2.88 mm
2
) (Figure 20)
-
-
206.8
o
C/W
SWITCHING SPECIFICATIONS
(V
GS
= 4.5V)
Turn-On Delay Time
t
d(ON)
V
DD
= 15V, I
D
= 5.0A
V
GS
=
4.5V,
R
GS
= 8.2
(Figures 14, 18, 19)
-
21.5
-
ns
Rise Time
t
r
-
82
-
ns
Turn-Off Delay Time
t
d(OFF)
-
29
-
ns
Fall Time
t
f
-
31
-
ns
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Delay Time
t
d(ON)
V
DD
= 15V, I
D
= 10.0A
V
GS
=
10V,
R
GS
= 9.1
(Figures 15, 18, 19)
-
12
-
ns
Rise Time
t
r
-
63
-
ns
Turn-Off Delay Time
t
d(OFF)
-
47
-
ns
Fall Time
t
f
-
46
-
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V,
I
D
= 9.0A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
34
-
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
18.6
-
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
2
-
nC
Gate to Source Gate Charge
Q
gs
-
6.4
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
7.2
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
1770
-
pF
Output Capacitance
C
OSS
-
390
-
pF
Reverse Transfer Capacitance
C
RSS
-
163
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 9.0A
-
0.81
-
V
Reverse Recovery Time
t
rr
I
SD
= 9.0A, dI
SD
/dt = 100A/
μ
s
-
27
-
ns
Reverse Recovered Charge
Q
RR
I
SD
= 9.0A, dI
SD
/dt = 100A/
μ
s
-
13.5
-
nC
ITF86116SQT
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