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參數資料
| 型號： | ITF86116SQT2 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | TSSOP |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 9A條（丁）| TSSOP封裝 |
| 文件頁數： | 4/12頁 |
| 文件大小： | 199K |
| 代理商： | ITF86116SQT2 |
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
10
100
500
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
T
J
= MAX RATED
T
A
= 25
o
C
SINGLE PULSE
100
R
θ
JA
= 62.5
o
C/W
0
2.0
10
20
30
40
2.5
3.0
3.5
4.0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
10
20
30
40
0
0.2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.4
0.6
1.0
0
I
D
,
V
GS
= 3V
V
GS
= 10V
T
A
= 25
o
C
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.8
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
I
D
= 1A
5
10
20
25
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 10A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
15
0.6
1.0
1.2
1.6
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 10A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.4
0.8
0.4
0.6
1.0
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.8
ITF86116SQT
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