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參數資料
型號: IXFH24N50S
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247SMD
中文描述: 晶體管| MOSFET的| N溝道| 500V五(巴西)直| 24A條(丁)|對247SMD
文件頁數: 2/2頁
文件大小: 103K
代理商: IXFH24N50S
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
Note 1
12
17
S
C
iss
C
oss
C
rss
2600
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
470
pF
160
pF
t
d(on)
t
r
t
d(off)
t
f
16
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2.0
(External)
12
ns
36
ns
7.7
ns
Q
g(on)
Q
gs
Q
gd
77
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
21
nC
40
nC
R
thJC
R
thCK
0.42
K/W
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
21
A
I
SM
Repetitive;
pulse width limited by T
JM
84
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
1.2
μ
C
I
RM
10
A
I
F
= I
S
,-di/dt = 100 A/
μ
s, V
R
= 100 V
Note: 1. Pulse test, t
300
μ
s, duty cycle d
2 %
IXFH 21N50F
IXFT 21N50F
TO-247 AD Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
P
Q
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-268 Outline
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.752
.106
.055
L2
L3 0.25 BSC .010 BSC
L4
3.80
4.10
1.00
1.15
.039
.045
.150
.161
Min Recommended Footprint
相關PDF資料
PDF描述
IXFT32N50Q TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-268
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