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參數資料
| 型號： | IXFH35N30S |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | TO-247VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 300V五（巴西）直| 35A條（?。﹟對247VAR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 110K |
| 代理商： | IXFH35N30S |
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
500
500
V
V
±
20
±
30
V
V
T
C
= 25
°
C
30N50Q
32N50Q
30N50Q
32N50Q
30
32
120
128
32
A
A
A
A
A
I
DM
T
= 25
°
C,
pulse width limited by T
JM
T
C
= 25
°
C
T
= 25
°
C
1500
I
AR
E
AR
E
AS
dv/dt
45
mJ
mJ
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C 360
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5 V/ns
P
D
T
J
T
JM
T
stg
T
L
W
-55 ... + 150
150
-55 ... + 150
°
C
°
C
°
C
1.6 mm (0.063 in) from case for 10 s 300
°
C
M
d
Weight
Mounting torque 1.13/10 Nm/lb.in.
TO-247 6
TO-268 4
g
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 uA
500
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±
20 V
DC
, V
DS
= 0
2.5
4.5
V
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25
°
C
T
J
= 125
°
C
30N50Q
32N50Q
100
μ
A
mA
1
R
DS(on)
0.16
0.15
98596D (03/01)
TO-247 AD (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
HiPerFET
TM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
V
DSS
500 V 30 A 0.16
500 V 32 A 0.15
t
rr
≤
250 ns
I
D25
R
DS(on)
IXFH/IXFT 30N50Q
IXFH/IXFT 32N50Q
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