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參數資料
| 型號： | IXFK34N80 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 34 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264 |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 48K |
| 代理商： | IXFK34N80 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
800
800
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
34
136
36
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
64
3
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
560
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
C
Mounting torque
TO-264
0.9/6 Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
800
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
3.0
5.0 V
200 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25 C
T
J
= 125 C
100 A
2 mA
0.24
R
DS(on)
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and ighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
Avalanche Rated
98560B (6/99)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFK 34N80
IXFX 34N80
V
DSS
I
D25
R
DS(on)
= 0.24
= 800 V
=
34 A
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關代理商/技術參數 |
參數描述 |
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| IXFK35N50 | 功能描述:MOSFET 35 Amps 500V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK35N50S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 35A I(D) | TO-264VAR |
| IXFK360N10T | 功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK360N15T2 | 功能描述:功率驅動器IC GigaMOS Trench T2 HiperFET PWR MOSFET RoHS:否 制造商:Micrel 產品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| IXFK36N60 | 功能描述:MOSFET 600V 36A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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