- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383193 > IXFM20N60 (IXYS CORP) HiPerFET Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | IXFM20N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 20 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204 |
| 封裝： | TO-204, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | IXFM20N60 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
15N60
20N60
15N60
20N60
15N60
20N60
15
20
60
80
15
20
A
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 4 mA
600
2.0
V
V
4.5
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
250
A
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
15N60
20N60
0.50
0.35
Pulse test, t 300 s, duty cycle d 2 %
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AE (IXFM)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
D
G
V
DSS
600 V
600 V
t
rr
250 ns
I
D25
15 A
20 A
R
DS(on)
0.50
0.35
IXFH/IXFM
15
N60
IXFH/IXFM
20
N60
91526E (4/99)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFM15N65 | HIPERFET Power MOSFTETs |
| IXFH20N60 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導(dǎo)通電阻0.35Ω的N溝道增強(qiáng)型 HiPerFET功率MOSFET) |
| IXFM7N80 | HiPerFET Power MOSFETs |
| IXFM7N90 | HIPERFET Power MOSFTETs |
| IXFN100N10S1 | HiPerFET PowerMOSFET with Schottky Diodes(最大漏源擊穿電壓100V,導(dǎo)通電阻15mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET（帶肖特基二極管）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFM21N50 | 功能描述:MOSFET 21 Amps 500V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFM21N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFM24N50 | 功能描述:MOSFET 500V 24A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFM26N50 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFM35N30 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。