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參數資料
| 型號： | IXFN100N25 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓250V,導通電阻27mΩ的N溝道增強型HiPerFET功率MOSFET) |
| 中文描述： | 100 A, 250 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 70K |
| 代理商： | IXFN100N25 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
250
250
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
E
AR
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
100
400
100
64
A
A
A
mJ
E
AS
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
3
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
600
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
-
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
250
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
2
4 V
200 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25 C
T
J
= 125 C
100 A
2 mA
27 m
R
DS(on)
98625A (6/99)
IXFN 100N25
V
DSS
I
D25
R
DS(on)
=
= 250 V
= 100 A
27 m
t
rr
250 ns
Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard package
miniBLOC,
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN100N50P | 功能描述:MOSFET 500V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN100N50Q3 | 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 500V/82A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN102N30P | 功能描述:MOSFET 102 Amps 300V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN106N20 | 功能描述:MOSFET 200V 106A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN110N20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 110A I(D) |
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