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參數資料
| 型號： | IXFN180N06 |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | HiPerFET功率MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 84K |
| 代理商： | IXFN180N06 |
1999 IXYS All rights reserved
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
International standard package
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
I
GSS
V
GS
=
±
20V, V
GS
= 0V
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
R
DS(on)
V
= 10V, I
D
= 0.5 I
D25
Note 2
Test Conditions
Characteristic Values
Min. Typ. Max.
100
V
2
4
V
±
100
nA
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
mA
2
8
m
98546B (8/99)
HiPerFET
TM
Power MOSFET
Single MOSFET Die
Symbol Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1M
Continuous
Transient
100
100
V
V
±
20
±
30
V
V
T
C
= 25
°
C
Terminal (current limit)
T
C
= 25
°
C; Note 1
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
180
100
720 A
180 A
A
A
60
3
mJ
J
5 V/ns
P
D
600
W
T
J
T
JM
T
stg
-55 ... +150
150
-55 ... +150
°
C
°
C
°
C
T
L
V
ISOL
1.6 mm (0.063 in) from case for 10 s
300
°
C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
IXFN 180N10
V
DSS
I
D25
R
DS(on)
= 8 m
= 100 V
= 180 A
t
rr
≤
250 ns
Preliminary data sheet
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN180N07 | 功能描述:MOSFET 180 Amps 70V 0.007 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN180N10 | 功能描述:MOSFET 180 Amps 100V 0.008 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN180N15P | 功能描述:MOSFET 180 Amps 150V 0.011 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN180N20 | 功能描述:MOSFET 200V 180A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN180N20 | 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B 制造商:IXYS Corporation 功能描述:MOSFET, N, SOT-227B 制造商:IXYS Corporation 功能描述:MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:200V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:700W ;RoHS Compliant: Yes |
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