- 您現在的位置：買賣IC網 > PDF目錄383193 > IXFN32N60 (IXYS CORP) HiPerFET Power MOSFET PDF資料下載
參數資料
| 型號： | IXFN32N60 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFET |
| 中文描述： | 32 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-227B, MINIBLOC-4 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 192K |
| 代理商： | IXFN32N60 |
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
XYS reserves the right to change limits, test conditions, and dimensions.
IXFK 32N60
IXFK 36N60
IXFN 32N60
IXFN 36N60
V
DSS
600V
600V
I
D25
36A
32A
R
DS(on)
0.18
0.25
t
rr
IXFK/FN 36N60
IXFK/FN 32N60
250ns
250ns
Preliminary Data
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
600
600
600
600
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
±
20
±
30
V
V
I
D25
T
C
= 25
°
C, Chip capability
32N60
36N60
32N60 128
36N60 144
32
36
32
36
128
144
20
A
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
I
AR
T
C
= 25
°
C
20
E
AR
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
30
30
mJ
dv/dt
I
S
5
5
V/ns
P
D
T
C
= 25
°
C
500
520
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
-
°
C
V
ISOL
50/60 Hz, RMSt = 1 min
I
ISOL
≤
1 mAt = 1 s
Mounting torque
Terminal connection torque
-
-
2500
3000
V~
V~
M
d
0.9/6 1.5/13
Nm/lb.in.
Nm/lb.in.
- 1.5/13
Weight
10
30
g
Features
International standard packages
JEDEC
TO-264 AA,
epoxy
meet
UL
94
V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
92807G (01/96)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ. Max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 % 32N60
600
V
V
2
4.5
±
200
nA
T
J
= 25
°
C
T
J
= 125
°
C
400
μ
A
mA
2
R
DS(on)
36N60
0.18
0.25
TO-264 AA (IXFK)
S
G
D
D (TAB)
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
D
G = Gate
S = Source
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
D = Drain
TAB = Drain
相關PDF資料 |
PDF描述 |
|---|---|
| IXFN340N07 | HiPerFET Power MOSFETs Single Die MOSFET |
| IXFN340N06 | HiPerFET Power MOSFETs Single Die MOSFET |
| IXFN34N100 | HiPerFET Power MOSFETs Single Die MOSFET |
| IXFN34N80 | HiPerFETTM Power MOSFETs Single DieMOSFET |
| IXFN36N100 | HiPerFET Power MOSFETs Single Die MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN32N80P | 功能描述:MOSFET 29 Amps 800V 0.27 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN340N06 | 功能描述:MOSFET 340 Amps 60V 0.003 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN340N07 | 功能描述:MOSFET HiperFET Pwr MOSFET 70V, 340A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN340N07_04 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET⑩ Power MOSFETs Single Die MOSFET |
| IXFN34N100 | 功能描述:MOSFET 34 Amps 1000V 0.28 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。