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參數資料
| 型號： | IXFN34N100 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs Single Die MOSFET |
| 中文描述： | 34 A, 1000 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 101K |
| 代理商： | IXFN34N100 |
2001 IXYS All rights reserved
Features
International standard packages
miniBLOC,
with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast ntrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
D25
Pulse test, t 300 s,
duty cycle d 2 %
1000
2.5
V
V
5.0
200
nA
T
J
= 25 C
T
J
= 125 C
100
A
2
mA
R
DS(on)
0.28
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
20
30
V
V
T
C
= 25 C, Chip capability
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
34
A
136
34
A
A
64
mJ
4
J
5
V/ns
P
D
T
J
T
JM
T
stg
700
W
-55 ... +150
C
C
C
150
-55 ... +150
V
ISOL
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
98763A (02/01)
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 34N100
V
DSS
I
D25
R
DS(on)
= 0.28
= 1000V
=
34A
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相關代理商/技術參數 |
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