- 您現在的位置：買賣IC網 > PDF目錄384547 > IXFR10N100F (IXYS CORP) HiPerFET Power MOSFETs ISOPLUS247 PDF資料下載
參數資料
| 型號： | IXFR10N100F |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs ISOPLUS247 |
| 中文描述： | 9 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 91K |
| 代理商： | IXFR10N100F |
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
T
C
= 25
°
C
12N100
10N100
12N100
10N100
12N100
10N100
10
A
A
A
A
A
A
9
I
DM
T
C
= 25
°
C, Pulse width limited by T
JM
48
40
12
10
I
AR
T
C
= 25
°
C
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
31
mJ
1
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
T
C
= 25
°
C
250
W
T
J
T
JM
T
stg
-40 ... +150
°
C
°
C
°
C
150
-40 ... +150
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
1000
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.5 V
±
100 nA
I
DSS
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= I
T
Notes 1 & 2
T
J
= 25
°
C
T
J
= 125
°
C
12N100
10N100
50
μ
A
1.5 mA
R
DS(on)
1.05
1.2
98934(7/02)
ISOPLUS 247
TM
(IXFR)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
F-Class: MegaHertz Switching
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Features
z
RF capable MOSFETs
z
Double metal process for low gate
resistance
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
z
Fast intrinsic rectifier
Applications
z
DC-DC converters
z
Switched-mode and resonant-mode
power supplies, >500kHz switching
z
DC choppers
z
13.5 MHz industrial applications
z
Pulse generation
z
Laser drivers
z
RF amplifiers
Advantages
z
ISOPLUS 247
TM
package for clip or
spring mounting
z
Space savings
z
High power density
V
DSS
I
D25
10 A
9 A
R
DS(on)
1.05
1.20
IXFR 12N100F 1000 V
IXFR 10N100F 1000 V
t
rr
≤
250 ns
Isolated back surface*
Preliminary Data Sheet
相關PDF資料 |
PDF描述 |
|---|---|
| IXFR12N100F | HiPerFET Power MOSFETs ISOPLUS247 |
| IXFR34N80 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導通電阻0.24Ω的N溝道增強型HiPerFET功率MOSFET) |
| IXFX30N100Q2 | HiPerFET Power MOSFETs Q-Class |
| IXGA16N60C2 | HiPerFASTTM IGBT C2-Class High Speed IGBT |
| IXGA16N60C2D1 | HiPerFASTTM IGBT C2-Class High Speed IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFR10N100Q | 功能描述:MOSFET MOSFET w/FAST Intrinsic Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR120N20 | 功能描述:MOSFET 200V 105A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR12N100 | 功能描述:MOSFET N-CH 1000V 10A ISOPLUS247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:HiPerFET™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IXFR12N100F | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR12N100Q | 功能描述:MOSFET 12 Amps 1000V 1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。