- 您現在的位置：買賣IC網 > PDF目錄383197 > IXGH17N100U1 (IXYS CORP) Low VCE(sat) IGBT with Diode High speed IGBT with Diode PDF資料下載
參數資料
| 型號： | IXGH17N100U1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode High speed IGBT with Diode |
| 中文描述： | 34 A, 1000 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 113K |
| 代理商： | IXGH17N100U1 |
1996 IXYS All rights reserved
TO-247 AD
GC
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
1000
1000
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 82
Clamped inductive load, L = 100
μ
H
34
17
68
A
A
A
I
= 34
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
150
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 4.5 mA, V
GE
= 0 V
= 500
μ
A, V
CE
= V
GE
1000
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
500
μ
A
mA
8
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
17N100U1
17N100AU1
3.5
4.0
V
V
V
CES
1000 V
1000 V
I
C25
34 A
34 A
V
CE(sat)
3.5 V
4.0 V
Low V
CE(sat)
IGBT with Diode
High speed IGBT with Diode
IXGH
17
N100U1
IXGH
17
N100AU1
Combi Packs
Features
l
International standard package
JEDEC TO-247 AD
l
IGBT and anti-parallel FRED in one
package
l
2nd generation HDMOS
TM
process
l
Low V
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery Epitaxial Diode
(FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Saves space (two devices in one
package)
l
Easy to mount (isolated mounting
screw hole)
l
Reduces assembly time and cost
91754D (3/96)
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH17N100 | Low VCE(sat) IGBT, High speed IGBT |
| IXGH17N100A | Low VCE(sat) IGBT, High speed IGBT |
| IXGM17N100 | Low VCE(sat) IGBT, High speed IGBT |
| IXGM17N100A | Low VCE(sat) IGBT, High speed IGBT |
| IXGH20N100 | IGBT for AC Motor Speed Control(VCES為1000V，VCE(sat)為3.0V的絕緣柵雙極晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGH20N100 | 功能描述:IGBT 晶體管 40 Amps 1000V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH20N100A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 40A I(C) | TO-247 |
| IXGH20N100U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 36A I(C) | TO-247 |
| IXGH20N120 | 功能描述:IGBT 晶體管 40 Amps 1200V 3 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH20N120A3 | 功能描述:IGBT 晶體管 G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。