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參數(shù)資料
| 型號： | IXGH24N50B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 48 A, 500 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 67K |
| 代理商： | IXGH24N50B |
1 - 4
2000 IXYS All rights reserved
V
CES
500 V
600 V
I
C(25)
48 A
48 A
V
CE(sat)
2.3 V
2.5 V
t
fi
80 ns
80 ns
IXGH24N50B
IXGH24N60B
Symbol
Test Conditions
Maximum Ratings
24N50
24N60
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
500
500
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 100 H
48
24
96
A
A
A
I
= 48
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
M
d
Weight
Mounting torque (M3)
1.13/10
Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250 A, V
GE
= 0 V
24N50
24N60
500
600
2.5
V
V
V
V
GE(th)
I
C
= 250 A, V
CE
= V
GE
5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
24N50
24N60
2.3
2.5
V
V
95584 B (7/00)
Features
International standard packages
JEDEC TO-247 AD
High frequency IGBT
High current handling capability
3rd generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Switching speed for high frequency
applications
Easy to mount with 1 screw
(insulated mounting screw hole)
TO-247 AD
C (TAB)
GCE
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
HiPerFAST
TM
IGBT
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH24N60A | HiPerFAST IGBT |
| IXGH24N60BU1 | HiPerFAST IGBT with Diode |
| IXGH24N60AU1S | HiPerFAST IGBT with Diode |
| IXGH24N60AU1 | HiPerFAST IGBT with Diode |
| IXGH24N60B | HiPerFAST IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH24N50BS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD |
| IXGH24N50BU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247AD |
| IXGH24N50BU1S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD |
| IXGH24N60A | 功能描述:IGBT 晶體管 48 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH24N60AU1 | 功能描述:IGBT 晶體管 G-series A,B,C RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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