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參數(shù)資料
| 型號(hào)： | IXGH24N60BU1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT with Diode |
| 中文描述： | 48 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 135K |
| 代理商： | IXGH24N60BU1 |
2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
600
V
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
500
μ
A
mA
8
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.3
V
DS95583C(01/03)
Features
High frequency IGBT and antiparallel
FRED in one package
High current handling capability
3rd generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies
(UPS)
Switched-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
High power density
Suitable for surface mounting
Switching speed for high frequency
applications
Easy to mount with 1 screw
(insulated mounting screw hole)
HiPerFAST
TM
IGBT
with Diode
G = Gate
E = Emitter
C = Collector
TAB = Collector
GCE
TO-247 AD
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 22
Clamped inductive load, L = 100
μ
H
48
A
24
A
96
A
SSOA
(RBSOA)
I
= 48
@ 0.8 V
CES
A
P
C
T
C
= 25
°
C
150
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
C (TAB)
IXGH 24N60BU1
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 48 A
= 2.3 V
= 80 ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH24N60AU1S | HiPerFAST IGBT with Diode |
| IXGH24N60AU1 | HiPerFAST IGBT with Diode |
| IXGH24N60B | HiPerFAST IGBT |
| IXGH24N60CD1 | Lightspeed Series HiPerFAST IGBT with Diode(VCES為600V，VCE(sat)為2.5V的HiPerFAST絕緣柵雙極晶體管(帶二極管）) |
| IXGT24N60CD1 | HiPerFAST IGBT with Diode Lightspeed Series |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH24N60BU1S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD |
| IXGH24N60C | 功能描述:IGBT 晶體管 48 Amps 600V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH24N60C4 | 功能描述:IGBT 模塊 High-Gain IGBTs RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH24N60C4D1 | 功能描述:IGBT 模塊 High Frequency Range 40khz C-IGBT w/Diode RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH24N60CD1 | 功能描述:IGBT 晶體管 48 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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