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參數資料
| 型號： | IXGT24N60CD1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT with Diode Lightspeed Series |
| 中文描述： | 48 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | D3PAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 103K |
| 代理商： | IXGT24N60CD1 |
1 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 110 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 100 H
48
24
80
A
A
A
I
= 48
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750 A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250 A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 150 C
200
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C110
, V
GE
= 15 V
2.1
2.5
V
98603A (4/99)
TO-268
(IXGT)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXGH)
E
C (TAB)
Features
International standard packages
JEDEC TO-247 and surface
mountable TO-268
High frequency IGBT
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Fast recovery expitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
IXGH 24N60CD1 V
CES
IXGT 24N60CD1
= 600 V
= 48 A
I
C25
V
CE(sat)
= 2.5 V
G
HiPerFAST
TM
IGBT
with Diode
Lightspeed
Series
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH24N60C | Lightspeed Series HiPerFAST IGBT(VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| IXGH25N100AU1 | High speed IGBT with Diode |
| IXGH25N100U1 | High speed IGBT with Diode |
| IXGH25N120 | Low VCE(sat) High speed IGBT |
| IXGH25N120A | Low VCE(sat) High speed IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGT25N160 | 功能描述:IGBT 晶體管 75 Amps 1600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT25N250 | 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT28N120B | 功能描述:IGBT 晶體管 50 Amps 1200V 3.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT28N120BD1 | 功能描述:IGBT 晶體管 50 Amps 1200V 3.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT28N30 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
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