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參數資料
| 型號： | IXGH30B60BD1 |
| 廠商： | IXYS Corporation |
| 英文描述： | HiPerFASTTM IGBT with Diode |
| 中文描述： | HiPerFASTTM與IGBT的二極管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 114K |
| 代理商： | IXGH30B60BD1 |
1 - 5
2000 IXYS All rights reserved
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
G
C
E
TO-247 AD
(IXGH)
98510C (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
600
2.5
V
V
5.0
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 150 C
200
A
3
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.8
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 100 H
60
30
A
A
A
120
I
= 60
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
200
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
M
d
Weight
Mounting torque, TO-247 AD
1.13/10
Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
HiPerFAST
TM
IGBT
with Diode
TO-268
(IXGT)
G
E
C (TAB)
Features
International standard package
Moderate frequency IGBT and
antiparallel FRED in one package
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
High power density
Optimized V
and switching
speeds for medium frequency
application
V
CES
I
C25
V
CE(sat)
=
t
fi(typ)
=
=
600 V
60 A
1.8 V
= 100 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 30N60BD1
IXGT 30N60BD1
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH30N30 | HiPerFAST IGBT |
| IXGH30N60 | Low VCE(sat) IGBT, High speed IGBT |
| IXGH30N60A | Low VCE(sat) IGBT, High speed IGBT |
| IXGH30N60B2 | HiPerFAST IGBT |
| IXGT30N60B2 | HiPerFAST IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGH30N120B3 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:GenX3 1200V IGBTs |
| IXGH30N120B3D1 | 功能描述:IGBT 晶體管 60 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH30N120BD1 | 功能描述:MOSFET 50 Amps 1200V 3.5 V Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXGH30N120C3H1 | 功能描述:IGBT 模塊 High Frequency Range 40khz C-IGBT w/Diode RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH30N120IH | 功能描述:MOSFET 40 Amps 1200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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