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參數資料
| 型號： | IXGT30N60B2 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 70 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | TO-268, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 586K |
| 代理商： | IXGT30N60B2 |
2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
GE(th)
I
C
= 250
μ
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 150
°
C
50
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= 24 A, V
GE
= 15 V
T
J
= 25
°
C
1.8
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C110
I
CM
T
C
= 25
°
C (limited by leads)
T
C
= 110
°
C
T
C
= 25
°
C, 1 ms
V
GE
= 15 V, T
VJ
= 125
°
C, R
G
= 10
Clamped inductive load @
≤
600 V
T
C
= 25
°
C
70
A
30
A
150
A
SSOA
(RBSOA)
P
C
I
CM
= 60
A
190
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque (M3)
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268 SMD
6
4
g
g
DS99122(11/03)
TO-268
(IXGT)
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXGH)
E
C (TAB)
Features
z
Medium frequency IGBT
z
Square RBSOA
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
Applications
z
PFC circuits
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
V
CES
I
C25
V
CE(sat)
t
fi
typ
= 600 V
= 70 A
< 1.8 V
= 82 ns
HiPerFAST
TM
IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
G
IXGH 30N60B2
IXGT 30N60B2
Advance Technical Data
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH30N60BU1 | HiPerFAST IGBT with Diode |
| IXGT30N60BU1 | HiPerFAST IGBT with Diode |
| IXGH30N60BD1 | HiPerFASTTM IGBT with Diode |
| IXGT30N60BD1 | HiPerFASTTM IGBT with Diode |
| IXGH30N60B | HiPerFASTTM IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGT30N60B2D1 | 功能描述:IGBT 晶體管 30 Amps 600V 1.8 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT30N60BD1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFASTTM IGBT with Diode |
| IXGT30N60BU1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode |
| IXGT30N60C2 | 功能描述:IGBT 晶體管 30 Amps 600V 2.7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT30N60C2D1 | 功能描述:IGBT 晶體管 30 Amps 600V 2.7 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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