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參數資料
| 型號： | IXGH35N120C |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT Lightspeed Series |
| 中文描述： | 70 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 53K |
| 代理商： | IXGH35N120C |
1 - 2
2000 IXYS All rights reserved
IGBT
Lightspeed
Series
Advance Technical Information
V
CES
I
C25
V
CE(sat)
=
t
fi(typ)
= 1200 V
=
4.0 V
= 115 ns
70 A
IXGH 35N120C
IXGT 35N120C
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GC
E
TO-247 AD (IXGH)
Features
International standard packages
JEDEC TO-268 surface and
JEDEC TO-247 AD
Low switching losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
98717 (4/18/2000)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA, V
= 0 V
= 750 A, V
CE
= V
GE
1200
2.5
V
V
5
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
250
A
5
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
V
V
T
J
= 125 C
3.2
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 5
Clamped inductive load
70
35
A
A
A
140
I
= 90
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
T
C
= 25 C
300
W
-55 ... +150
C
C
C
150
-55 ... +150
300
C
260
C
M
d
Weight
Mounting torque (M3)
1.13/10 Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
TO-268
(IXGT)
(TAB)
G
E
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料 |
PDF描述 |
|---|---|
| IXGT35N120C | IGBT Lightspeed Series |
| IXGH38N60U1 | Ultra-Low VCE(sat) IGBT with Diode |
| IXGH38N60 | Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的絕緣柵雙極晶體管) |
| IXGH39N60B | HiPerFAST IGBT |
| IXGH39N60BD1 | HiPerFAST IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGH36N60A3 | 功能描述:IGBT 模塊 GenX3 600V IGBTs RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH36N60A3D4 | 功能描述:IGBT 晶體管 36 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH36N60B3 | 功能描述:IGBT 模塊 GenX3 600V IGBTs RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGH36N60B3C1 | 功能描述:IGBT 晶體管 75Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH36N60B3D1 | 功能描述:MOSFET 36 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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