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參數(shù)資料
| 型號(hào)： | IXGK35N120C |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 70 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 136K |
| 代理商： | IXGK35N120C |
2002 IXYS All rights reserved
HiPerFAST
TM
IGBT
Preliminary Data Sheet
V
CES
= 1200 V
I
C25
= 70 A
V
CE(sat)
= 4.0 V
t
fi(typ)
= 115 ns
IXGK 35N120C
IXGX 35N120C
IXGK 35N120CD1
IXGX 35N120CD1
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
●
International standard packages
JEDEC TO-264 and PLUS247
TM
●
Low switching losses, low V
(sat)
●
MOS Gate turn-on
- drive simplicity
Applications
●
AC motor speed control
●
DC servo and robot drives
●
DC choppers
●
Uninterruptible power supplies
(UPS)
●
Switched-mode and resonant-mode
power supplies
Advantages
●
High power density
●
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98961 (10/02)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA, V
= 0 V
= 750
μ
A, V
CE
= V
GE
1200
2.5
V
V
5
I
CES
V
CE
= V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
μ
A
mA
5
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
V
V
T
J
= 125
°
C
3.2
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
1200
V
1200
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 5
Clamped inductive load
70
A
35
A
140
A
SSOA
(RBSOA)
I
= 90
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
T
C
= 25
°
C
350
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque (M3) (IXGK)
1.13/10Nm/lb.in.
Weight
TO-264 AA
PLUS247
TM
10
g
g
6
TO-264 AA (IXGK)
(D1)
G
E
C (TAB)
GC
E
C (TAB)
C
●
Spring clip or clamp assembly
possible.
PLUS 247
TM
(IXGX)
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| IXGK35N120CD1 | HiPerFAST IGBT |
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| IXGK50N50BU1 | HiPerFAST IGBT with Diode |
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| IXGK35N120CD1 | 功能描述:IGBT 晶體管 70 Amps 1200V 4 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK400N30A3 | 功能描述:IGBT 晶體管 400 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK400N30B3 | 功能描述:IGBT 晶體管 400 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK400N30C3 | 功能描述:IGBT 晶體管 400 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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