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參數(shù)資料
| 型號： | IXGK50N60BU1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT with Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264AA, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 162K |
| 代理商： | IXGK50N60BU1 |
1 - 6
2000 IXYS All rights reserved
97510A(1/98)
HiPerFAST
TM
IGBT with Diode
Combi Pack
Preliminary data
V
CES
I
C25
V
CE(sat)
t
fi
500 V 75 A
600 V 75 A
2.3 V
2.5 V
100ns
120ns
IXGK 50N50BU1
IXGK 50N60BU1
Symbol
Test Conditions
Maximum Ratings
50N50
50N60
V
CES
V
CGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
500
500
600
600
V
V
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
Continuous
Transient
20
30
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 10
Clamped inductive load, L = 30 H
75
50
75
50
200
A
A
A
200
I
= 100
@ 0.8 V
CES
A
P
C
T
C
= 25 C
300
300
W
T
J
T
JM
T
stg
M
d
Weight
-55 ... +150
150
-55 ... +150
C
C
C
Mounting torque (M4)
0.9/6
Nm/lb.in.
10
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 500 A, V
GE
= 0 V
50N50
50N60
500
600
2.5
V
V
V
V
GE(th)
I
C
= 500 A, V
CE
= V
GE
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
250
15
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
50N50BU1
50N60BU1
2.3
2.5
V
V
TO-264 AA
GCE
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
G
International standard package
JEDEC TO-264 AA
G
High frequency IGBT and anti-
parallel FRED in one package
G
2nd generation HDMOS
TM
process
G
Low V
- for minimum on-state conduction
losses
G
MOS Gate turn-on
- drive simplicity
G
Fast Recovery
Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
G
AC motor speed control
G
DC servo and robot drives
G
DC choppers
G
Uninterruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
Advantages
G
Space savings (two devices in one
package)
G
Easy to mount with 1 screw
(isolated mounting screw hole)
G
Reduces assembly time and cost
G
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
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| IXGK50N60C2D1 | 功能描述:IGBT 晶體管 50 Amps 600V 2.5V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK50N90B2D1 | 功能描述:IGBT 晶體管 50 Amps 600V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK55N120A3H1 | 功能描述:IGBT 模塊 Low-Frequency Range Low Vcesat w/ Diode RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IXGK60N60 | 功能描述:IGBT 晶體管 75 Amps 600V 1.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK60N60B2D1 | 功能描述:IGBT 晶體管 IGBT w/ Diode 600V 60A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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