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參數資料
| 型號： | IXGP12N60U1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode Combi Pack |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數： | 1/6頁 |
| 文件大小： | 97K |
| 代理商： | IXGP12N60U1 |
1996 IXYS All rights reserved
92792D (9/96)
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 150
Clamped inductive load, L = 300
μ
H
24
12
48
A
A
A
I
= 20
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
T
C
= 25
°
C
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
4
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Features
l
International standard package
JEDEC TO-220 AB
l
IGBT with antiparallel FRED in one
package
l
2nd generation HDMOS
TM
process
l
Low V
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast
Recovery Epitaxial Diode FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Easy to mount with 1 screw
l
Space savings (two devices in one
package)
l
Reduces assembly time and cost
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 750
μ
A, V
GE
= 0 V
= 250
μ
A, V
GE
= V
GE
600
2.5
V
V
5.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
250
2.5
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15 V
2.5
V
Preliminary data
V
CES
I
C
V
CE(sat)
=
=
=
600 V
24 A
2.5 V
IXGP12N60U1
Low V
CE(sat)
IGBT with Diode
Combi Pack
TO-220 AB
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
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