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參數資料
| 型號： | IXGP16N60C2D1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFASTTM IGBT C2-Class High Speed IGBT |
| 中文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 535K |
| 代理商： | IXGP16N60C2D1 |
2004 IXYS All rights reserved
G = Gate
E = Emitter
C = Collector
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C110
I
D110
I
CM
T
C
= 25
°
C
T
C
= 110
°
C
T
C
= 110
°
C (IXG_16N60C2D1 diode)
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 22
Clamped inductive load
40
A
16
A
11
A
100
A
SSOA
(RBSOA)
I
= 32
@0.8 V
CES
A
P
C
T
C
= 25
°
C
150
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
M
d
Mounting torque
(M3.5 screw)
0.55/5 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Maximum tab temperature
soldering SMD devices for 10s
260
°
C
Weight
TO-220
TO-263
4
2
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
GE(th)
I
C
= 250
μ
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= V
V
GE
= 0 V
16N60C2
16N60C2D1
25
50
μ
A
μ
A
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
= 12 A
,
V
GE
= 15 V
Note 2
3.0
V
V
T
J
=125
°
C
2.1
DS99142A(3/04)
HiPerFAST
TM
IGBT
C2-Class High Speed
IGBT
IXGA 16N60C2
IXGP 16N60C2
IXGA 16N60C2D1
IXGP 16N60C2D1
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
=
40 A
= 3.0 V
=
35 ns
D1
TO-220 (I
XGP
)
GCE
C
(TAB)
C
(TAB)
G
C
TO-263 (I
XGA
)
Advance Technical Information
Features
z
Very high frequency IGBT
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
Applications
z
PFC circuits
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
Advantages
z
High power density
z
Very fast switching speeds for high
frequency applications
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGP20N100 | 功能描述:IGBT 晶體管 40 Amps 1000V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGP20N120 | 功能描述:IGBT 晶體管 40 Amps 1200V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGP20N120A3 | 功能描述:IGBT 晶體管 G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGP20N120B | 功能描述:IGBT 晶體管 40 Amps 1200V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGP20N120B3 | 功能描述:IGBT 晶體管 G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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