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參數資料
| 型號： | IXGP48N60A3 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 48 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 222K |
| 代理商： | IXGP48N60A3 |
2008 IXYS CORPORATION, All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
C = 25°C to 150°C
600
V
V
CGR
T
J = 25°C to 150°C, RGE = 1MΩ
600
V
V
GES
Continuous
± 20
V
V
GEM
Transient
± 30
V
I
C110
T
C = 110°C
48
A
I
CM
T
C = 25°C, 1ms
300
A
SSOA
V
GE = 15V, TVJ = 125°C, RG = 5Ω
I
CM =
96
A
(RBSOA)
Clamped inductive load @
≤ 600V
P
C
T
C = 25°C
300
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062 in.) from case for 10s
300
°C
T
SOLD
Plastic body for 10 seconds
260
°C
M
d
Mounting torque (TO-247 & TO-220)
1.13/10
Nm/lb.in.
Weight
TO-247
6.0
g
TO-220
3.0
g
TO-263
2.5
g
DS99581B(07/08)
IXGA48N60A3
IXGH48N60A3
IXGP48N60A3
G = Gate
C
= Collector
E = Emitter
TAB = Collector
Symbol Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
BV
CES
I
C
= 250
μA, V
GE = 0V
600
V
V
GE(th)
I
C
= 250
μA, V
CE = VGE
3.0
5.0
V
I
CES
V
CE = VCES
25
μA
V
GE = 0V
T
J = 125°C
250
μA
I
GES
V
CE = 0V, VGE = ± 20V
±100 nA
V
CE(sat)
I
C
= 32A, V
GE = 15V, Note 1
1.18
1.35
V
V
CES
= 600V
I
C110
= 48A
V
CE(sat) ≤
≤≤≤≤ 1.35V
TO-220 (IXGP)
TO-263 (IXGA)
G
E
TO-247 (IXGH)
G
E
C
G
C
E
(TAB)
GenX3TM 600V IGBT
Features
Optimized for low conduction losses
International standard packages
Advantages
High power density
Low gate drive requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
Ultra Low Vsat PT IGBT for
up to 5kHz switching
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGP48N60B3 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:GenX3 600V IGBT |
| IXGP48N60C3 | 功能描述:IGBT 晶體管 75Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGP4N100 | 功能描述:IGBT 晶體管 8 Amps 1000V 2.70 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGP50N33TBM-A | 功能描述:IGBT 晶體管 50 Amps 330V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGP50N60B4 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High-Gain IGBTs |
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