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參數(shù)資料
| 型號： | IXKC20N60C |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | CoolMOS Power MOSFET in ISOPLUS220 Package |
| 中文描述： | 14 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220LV, ISOPLUS220LV, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 527K |
| 代理商： | IXKC20N60C |
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
GS
I
D25
I
D90
I
D(RMS)
E
AS
E
AR
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
T
J
Continuous
= 25
°
C to 150
°
C
600
V
±
20
V
T
C
T
C
Package lead current limit
= 25
°
C; Note 1
= 90
°
C, Note 1
14
10
A
A
45
A
I
o
I
o
T
C
= 10A, T
C
= 25
°
C
= 20A
690
1
mJ
mJ
= 25
°
C
125
W
-55 ... +150
150
°
C
°
C
°
C
-55 ... +125
1.6 mm (0.062 in.) from case for 10 s
300
°
C
RMS leads-to-tab, 50/60 Hz, t = 1 minute
2500
V~
Mounting force
11 ... 65 / 2.4 ...11 N/lb
3
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DS(on)
V
GS
= 10 V, I
D
= I
D90
, Note 3
V
GS
= 10 V, I
D
= I
D90
, Note 3 T
J
= 125
°
C
160
463
190 m
m
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
3.5
5.5
V
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
1
μ
A
μ
A
10
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
G = Gate,
S = Source
D = Drain,
* Patent pending
V
DSS
I
D25
R
DS(on)
= 600 V
= 14 A
=190 m
DS98848C(1/04)
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
3
RD
generation CoolMOS power MOSFET
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive
switching (UIS)
z
Low thermal resistance due to reduced
chip thickness
z
Low drain to tab capacitance(<30pF)
Applications
z
Switched Mode Power Supplies (SMPS)
z
Uninterruptible Power Supplies (UPS)
z
Power Factor Correction (PFC)
z
Welding
z
Inductive Heating
Advantages
z
Easy assembly: no screws or isolation
foils required
z
Space savings
z
High power density
CoolMOS
TM
Power MOSFET
in ISOPLUS220
TM
Package
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Low R
DS(on)
, Superjunction MOSFET
IXKC 20N60C
CooLMOS is a trademark of Infineon
Technologies, AG
G
DS
ISOPLUS 220LV
TM
E153432
Isolated back surface*
Preliminary Data Sheet
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| IXKC23N60C5 | 功能描述:MOSFET 23 Amps 600V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKC25N80C | 功能描述:MOSFET 25 Amps 800V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKC40N60C | 功能描述:MOSFET 28 Amps 600V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKF40N60SCD1 | 功能描述:MOSFET 40 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXKG25N80C | 功能描述:MOSFET 25 Amps 800V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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