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參數資料
| 型號： | IXSH10N60 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Speed IGBT - Short Circuit SOA Capability |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數： | 1/4頁 |
| 文件大小： | 217K |
| 代理商： | IXSH10N60 |
1996 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 150
Clamped inductive load, L = 300
μ
H
20
10
40
A
A
A
I
= 20
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125
°
C
R
G
= 82
,
non repetitive
T
C
= 25
°
C
10
μ
s
P
C
T
J
T
JM
T
stg
M
d
Weight
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Low V
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 20 kHz
Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
High power density
Preliminary data
High Speed IGBT
Short Circuit SOA Capability
95562B(10/96)
C (TAB)
GC
E
TO-247 AD
G = Gate
E = Emitter
C = Collector
Tab = Collector
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 750
μ
A, V
CE
= V
GE
600
3.5
V
V
6.5
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
10N60
10N60A
2.5
3.0
V
V
V
CES
I
C(25)
V
CE(sat)
600 V
600 V
20 A
20 A
2.5 V
3.0 V
IXSH10N60
IXSH10N60A
相關PDF資料 |
PDF描述 |
|---|---|
| IXSH10N60A | High Speed IGBT - Short Circuit SOA Capability |
| IXSH15N120A | IGBT |
| IXSH15N120BD1 | S Series - Improved SCSOA Capability |
| IXST15N120BD1 | S Series - Improved SCSOA Capability |
| IXSH15N120AU1 | IGBT with Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSH10N60A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Speed IGBT - Short Circuit SOA Capability |
| IXSH10N60B2D1 | 功能描述:IGBT 晶體管 10 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH15N120A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT |
| IXSH15N120AU1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT with Diode |
| IXSH15N120B | 功能描述:IGBT 晶體管 30 Amps 1200V 3.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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