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參數資料
| 型號： | IXSH25N120AU1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT with Diode |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 36K |
| 代理商： | IXSH25N120AU1 |
1 - 2
2000 IXYS All rights reserved
BV
CES
V
GE(th)
I
C
I
C
= 4 mA, V
GE
= 0 V
= 2.5 mA, V
CE
= V
GE
1200
V
4
8
V
I
CES
V
CE
= 0.8 V
CES
, V
GE
= 0 V
Note 2
T
J
= 25°C
T
J
= 125°C
500
A
8 mA
I
GES
V
CE
= 0 V, V
GE
= ±20 V
+ 100 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
V
Features
High frequency IGBT with guaranteed
short circuit SOA capability.
IGBT with anti-parallel diode in one
package
2
nd
generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies
(UPS)
Switched-mode and resonant-mode
power supplies
DC choppers
Advantages
Saves space (two devices in one
package)
Easy to mount (isolated mounting
hole)
Reduces assembly time and cost
Operates cooler
Easier to assemble
I
C25
V
CES
V
CE(sat)
=
=
= 1200 V
4.0 V
50 A
C
E
G
IGBT with Diode
"S" Series - Improved SCSOA Capability
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 M
1200
1200
V
V
V
GES
V
GEM
Continuous
Transient
±20
±30
V
V
I
C25
I
C90
I
CM
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
50
25
80
A
A
A
SSOA
(RBSOA)
V
GE
= 15 V, T
J
= 125°C, R
G
= 33
Clamped inductive load, L = 100 μH
I
CM
= 50
@ 0.8 V
CES
A
t
sc
P
C
T
J
T
JM
T
STG
M
d
Weight
T
J
= 125oC, V
CE
= 720 V; V
GE
= 15V, R
G
= 33
T
C
= 25°C
10
μs
200
W
-55 ... +150
°C
°C
°C
150
-55 ... +150
Mounting torque
1.15/10 Nm/lb-in.
6
g
Max. Lead Temperature for
Soldering
(1.6mm from case for 10s)
300
°C
94521C(7/00)
TO-247 AD
G
C
E
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSH25N120AU1
相關PDF資料 |
PDF描述 |
|---|---|
| IXSH25N120A | IGBT |
| IXSH30N60BD1 | High Speed IGBT with Diode(VCES為600V，VCE(sat)為2.0V的高速絕緣柵雙極晶體管(帶二極管）) |
| IXSH30N60B | High Speed IGBT |
| IXSH30N60C | High Speed IGBT |
| IXST30N60B | High Speed IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSH30N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSH30N60A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT, High Speed IGBT |
| IXSH30N60AU1 | 功能描述:IGBT 晶體管 30 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60B | 功能描述:IGBT 晶體管 55 Amps 600V 2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSH30N60B2D1 | 功能描述:IGBT 晶體管 30 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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