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參數資料
| 型號： | IXSK40N60BD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | IGBT with Diode(VCES為600V，VCE(sat)為2.2V的絕緣柵雙極晶體管(帶二極管）) |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-264 |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | IXSK40N60BD1 |
1 - 2
2000 IXYS All rights reserved
G = Gate,
E = Emitter
C = Collector,
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C, limited by leads
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
75
40
150
A
A
A
I
= 80
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 22
non repetitive
T
C
= 25 C
10
s
P
C
T
J
T
JM
T
stg
280
W
-55 ... +150
C
C
C
150
-55 ... +150
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
(TO-264)
0.9/6
Nm/lb.in.
300
C
Weight
TO-264
PLUS247
10
g
g
5
V
CES
I
C25
V
CE(sat)
= 2.2 V
t
fi(typ)
= 120 ns
= 600 V
= 75 A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 150 C
650
A
5
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.2
V
98573A (7/00)
PLUS 247
TM
(IXSX)
IGBT with Diode
PLUS247
TM
package
Short Circuit SOA Capability
IXSK 40N60BD1
IXSX 40N60BD1
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Medium frequency IGBT and anti-
parallel FRED in one package
Latest generation HDMOS
TM
process
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery,low leakage
Epitaxial
Diode
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings (two devices in one
package)
Reduces assembly time and cost
TO-264 AA
(IXSK)
GCE
GCE
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關PDF資料 |
PDF描述 |
|---|---|
| IXSK50N60AU1 | IGBT with Diode(VCES為600V，VCE(sat)為2.7V的絕緣柵雙極晶體管(帶二極管）) |
| IXSK50N60BD1 | IGBT with Diode(VCES為600V，VCE(sat)為2.5V的絕緣柵雙極晶體管(帶二極管）) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXSK40N60CD1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK50N60AU1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK50N60BD1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK50N60BU1 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSK80N60B | 功能描述:IGBT 晶體管 80 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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