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參數(shù)資料
| 型號(hào)： | IXST40N60B |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | OSC 5V SMT PLAS 14X9 CMOS |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 55K |
| 代理商： | IXST40N60B |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 2.7
Clamped inductive load, V
CC
= 0.8 V
CES
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
R
G
= 22
non repetitive
T
C
= 25 C
75
40
A
A
A
150
I
= 80
@ 0.8 V
CES
A
t
(SCSOA)
10
s
P
C
T
J
T
JM
T
stg
M
d
Weight
280
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
600
V
V
4
7
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
25
1
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.2
V
Features
International standard packages
Guaranteed Short Circuit SOA
capability
Low V
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast Fall Time for switching speeds
up to 50 kHz
Applications
AC and DC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
98521B (7/00)
G = Gate
E = Emitter
TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
G
E
High Speed IGBT
Short Circuit SOA Capability
IXSH 40N60B
IXST 40N60B
C
E
G
IXYS reserves the right to change limits, test conditions, and dimensions.
V
CES
I
C25
V
CE(sat)
=
t
fi typ
=
=
600V
75A
2.2V
=
100 ns
Preliminary data
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